Part Number Hot Search : 
5KP60 FG4305 XY6112 80MHZ MJD11203 FR2WSMA BC858C STP53N06
Product Description
Full Text Search
 

To Download MPSW56D26Z Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  mpsw56 mpsw56 pnp general purpose amplifier this device is designed for general purpose medium power amplifiers and switches requiring collector currents to 800 ma. sourced from process 79. absolute maximum ratings* ta = 25c unless otherwise noted notes : 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. thermal characteristics ta = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. symbol parameter value units v ceo collector-emitter voltage 80 v v cbo collector-base voltage 80 v v ebo emitter-base voltage 4.0 v i c collector current - continuous 1.0 a t j , t stg operating and storage junction temperature range -55 to +150 c symbol characteristic max units mpsw56 p d total device dissipation derate above 25 c 1.0 8.0 w mw/ c r jc thermal resistance, junction to case 50 c/w r ja thermal resistance, junction to ambient 125 c/w to-226 c b e * device mounted on fr-4 pcb 36 mm x 18 mm x 1.5 mm; mounting pad for the collector lead min. 6 cm 2 . ? 2000 fairchild semiconductor corporation mpsw56, rev a
mpsw56 electrical characteristics ta = 25 c unless otherwise noted off characteristics symbol parameter test conditions min max units on characteristics* v (br)ceo c ollector-em itter b reakdown voltage i c = 1.0 m a, i b = 0 80 v v (br)cbo collector-base breakdown voltage i c = 100 a, i e = 0 80 v v (br)ebo emitter-base breakdown voltage i e = 1.0 m a , i c = 0 4.0 v i cbo collector-cutoff current v cb = 60 v , i e = 0 0.1 a i ceo collector-cutoff current v ce = 60 v 0.5 a i ebo e m itter-c utoff c urrent v eb = 3.0 v, i c = 0 0.10 a h fe dc current gain i c = 50 ma, v ce = 1.0 v i c = 250 ma, v ce = 1.0 v 100 50 v ce( sat ) collector-emitter saturation voltage i c = 250 ma, i b = 10 ma 0.5 v v be( on ) base-emitter on voltage i c = 250 ma, v ce = 5.0 v 1.2 v small signal characteristics * pulse test: pulse width 300 s, duty cycle 1.0% typical characteristics f t current gain-bandwidth product i c = 250 ma, v ce = 5.0 v, f = 20 mhz 50 mhz c ob collector-base capacitance v cb = 10 v, i e = 0, f = 1.0 mhz 15 pf pnp general purpose amplifier (continued) typical pulsed current gain vs collector current 0.01 0.02 0.05 0.1 0.5 1 0 50 100 150 200 i - collector current (ma) h - typical pulsed current gain c fe 125 c 25 c - 40 c v = 1.0 v ce collector-emitter saturation voltage vs collector current p 10 100 1000 0.01 0.1 1 2 i - collector current (ma) v - collector emitter voltage (v) c cesat 25 c - 40 o c 125 o c = 10
mpsw56 pnp general purpose amplifier (continued) typical characteristics (continued) base emitter on voltage vs collector current 1 10 100 1000 0.2 0.4 0.6 0.8 1 i - collector current (ma) v - base emitter on voltage (v) c beon v = 5v ce 25 c - 40 o c 125 o c base-emitter saturation voltage vs collector current 1 10 100 1000 0.4 0.6 0.8 1 i - collector current (ma) v - base emitter voltage (v) c besat = 10 25 c - 40 o c 125 o c collector-cutoff current vs. ambient temperature 25 50 75 100 125 0.01 0.1 1 10 100 t - ambient temperature ( c) i - collector current (na) a cbo o v = 60v cb collector-base capacitance vs collector-base voltage pr79 0 4 8 1216202428 0 10 20 30 40 v - collector-base voltage (v) c - collector-base capacitance (pf) cb o b o f = 1.0 mhz gain bandwidth product vs collector current 1 10 100 1000 0 50 100 150 200 250 i - collector current (ma) f - gain bandwidth product (mhz) c t v = 10v ce safe operating area to-226 p9 110100 0.01 0.1 1 10 v - collector-emitter voltage (v) i - collector current (a) ce c *pulsed operation t = 25 c a limit determined by bv ceo dc t = 25 c collector lead dc t = 25 c ambient 100 s* 10 s* 1.0 m s*
mpsw56 typical characteristics (continued) pnp general purpose amplifier (continued) power dissipation vs ambient temperature 0 255075100125150 0 0.25 0.5 0.75 1 temperature ( c) p - power dissipation (w) d o to-226 sot-223
trademarks acex? coolfet? crossvolt? e 2 cmos tm fact? fact quiet series? fast ? fastr? gto? hisec? the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. syncfet? tinylogic? uhc? vcx? isoplanar? microwire? pop? powertrench qfet? qs? quiet series? supersot?-3 supersot?-6 supersot?-8 ? rev. d


▲Up To Search▲   

 
Price & Availability of MPSW56D26Z

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X